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Electrical probing (failure analysis)

A simple task in the world of electronics is the measurement of an I-V curve of a single transistor. However, if the size of the transistor is reduced to a few hundred nanometres, this task becomes very challenging. Probing on small structures requires high positioning accuracy and a very stable probing system. Our probing solutions exceed the necessary requirements, providing you with a fast and simple system to effectively increase your probing throughput.

Probing on sub 100 nm technology
More images Probing on sub 100 nm technology
Probing a 5 µm structure
More images Probing a 5 µm structure
Four-point electrical probing
More images Four-point electrical probing
Two-point electrical probing
More images Two-point electrical probing

Products

MM3A-EM

MM3A-LMP

M4PP-EM

LCMK-EM

STA

Documents

Fast and safe electrical probing

Detecting hidden information using EBIC & RCI

Videos

Nanowire

250 nm pads

Four-point probing

Stage tilt during probing

Publications

An in-situ four-point probe method for the electrical characterization of beam induced depositions

Establishing Ohmic contacts for in situ current-voltage characteristic measurements on a carbon nanotube inside the scanning electron microscope

Performing probe experiments in the SEM

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Presentations

Manipulating and measuring carbon nanotubes inside SEM using a probe system

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