EBIC and RCI

Two powerful yet simple analysis techniques for detecting failures in semiconductors are Electron Beam Induced Current (EBIC) and Resistive Contrast Imaging (RCI). Both methods use the electron beam to generate a current inside a sample and the current is then amplified for imaging purposes.

An advantage of EBIC and RCI over other probing techniques is that the passivation layer does not need to be removed before analysis can begin. Measurements can also be performed without damaging the surface of the integrated circuit. Both are valuable techniques for the evaluation of p-n junctions in any semiconductor device.

Have a look at the examples below of EBIC and RCI tasks that have been done recently using our products.